GENESIC SEMICONDUCTOR INC.
US UEI DV7NF6NE49J6 · SME
41public awards
$21.0Mtotal public funding
2021-07-29latest award
State aid awards (41)
| Date | Amount | Type | Programme | Granted by |
|---|---|---|---|---|
| 2021-07-29 | $167k | Grant | 4H-SiC BiCMOS Development on 6â wafers in a High-Volume Production F | Department of Defense |
| 2020-10-08 | $2.0M | Grant | Drift Step Recovery Diode (DSRD) for Wideband (WB) and Ultra-Wideband | Department of Defense |
| 2020-08-27 | $1.1M | Grant | Automotive-qualified SiC DMOSFETs with integrated Schottky Rectifiers | Department of Energy |
| 2020-08-24 | $1.1M | Grant | Advanced Power Conversion Systems featuring SiC MOSFETs with In-Situ R | Department of Energy |
| 2019-07-01 | $206k | Grant | Automotive-qualified 3300 V SiC MOSFETs for next-generation extreme fa | Department of Energy |
| 2019-07-01 | $206k | Grant | Advanced Power Conversion Systems featuring SiC MOSFETs with In-Situ R | Department of Energy |
| 2018-10-15 | $130k | Grant | Stackable, high voltage Silicon Carbide based DSRDs | Department of Defense |
| 2018-08-27 | $1.0M | Grant | Automotive-qualified SiC DMOSFETs with integrated Schottky Rectifiers | Department of Energy |
| 2017-09-07 | $2.0M | Grant | Robust SiC MOSFET based Power Modules | Department of Defense |
| 2017-07-31 | $150k | Grant | Solid State High Voltage Switching Device for Multi-Point Initiation | Department of Defense |
| 2017-07-14 | $999k | Grant | Solid State High Voltage Switching Device for Multi-Point Initiation | Department of Defense |
| 2017-06-12 | $150k | Grant | Automotive-qualified 900 V/250 A SiC DMOSFETs with integrated Schottky | Department of Energy |
| 2017-06-05 | $750k | Grant | Monolithically Integrated Rad-Hard SiC Gate Driver for 1200 V DMOSFETs | National Aeronautics and Space Administration |
| 2016-08-01 | $1.0M | Grant | AllSiC power module based boost converter platform for gridtied energy | Department of Energy |
| 2016-08-01 | $1.0M | Grant | 900 V/200 A SiC Schottky Diode fabrication on 150 mm substrates | Department of Energy |
| 2016-07-11 | $150k | Grant | Robust SiC MOSFET based Power Modules | Department of Defense |
| 2016-06-10 | $125k | Grant | Monolithically Integrated Rad-Hard SiC Gate Driver for 1200 V DMOSFETs | National Aeronautics and Space Administration |
| 2015-06-17 | $125k | Grant | Rad-hard 1200 V SiC MOSFETs and Schottky Rectifiers for a 30 kW PPU | National Aeronautics and Space Administration |
| 2015-06-08 | $150k | Grant | 900 V/200 A SiC Schottky Diode fabrication on 150 mm substrates in a h | Department of Energy |
| 2015-06-08 | $150k | Grant | All-Silicon Carbide power module based boost converter platform for gr | Department of Energy |
| 2014-04-15 | $1.5M | Grant | 300C/15 kW power converter with AlGaN/GaN-Si MOS-HFETs for electric pr | National Aeronautics and Space Administration |
| 2013-06-10 | $150k | Grant | Silicon Carbide Quasi-Bipolar Junction Transistor (QBJT)-Based boost c | Department of Energy |
| 2013-05-23 | $200k | Grant | 500C/3.8 kW-class Resonant-Mode Power Converter featuring SiC Super Ju | National Aeronautics and Space Administration |
| 2013-02-19 | $150k | Grant | 1200 V/50 A AlGaN-GaN-Si MOS-HFETs and Schottky Rectifiers | Department of Energy |
| 2012-06-28 | $150k | Grant | 15 kV Phase Leg Modules with SiC Monolithically Integrated JBS Rectifi | Department of Energy |
| 2011-02-18 | $100k | Grant | Integrated SiC Super Junction Transistor-Diode Devices for High-Power | National Aeronautics and Space Administration |
| 2010-02-25 | $750k | Grant | High Voltage High Frequency SiC Switch | Department of Defense |
| 2009-09-29 | $1.4M | Grant | Stackable, Fast Plasma Spreading (FPS) SiC Thyristor Modules with Sold | Department of Defense |
| 2009-01-01 | $100k | Grant | Development of an Accelerated Life Test for Wide-Bandgap (SiC) HEV/PHE | Department of Energy |
| 2008-10-31 | $120k | Grant | Stackable, Fast Plasma Spreading (FPS) SiC Thyristor Modules with Sold | Department of Defense |
| 2008-09-26 | $750k | Grant | SiC Switch for Laser Power Modules | Department of Defense |
| 2008-07-11 | $70k | Grant | High Voltage High Frequency SiC Switch | Department of Defense |
| 2008-01-01 | $90k | Grant | CVD-based Polytype Controlled SiC Nanowire Growth | Department of Commerce |
| 2008-01-01 | $750k | Grant | Large Area SiC GTO Thyristor Development Widebandgap High Voltage High | Department of Energy |
| 2008-01-01 | $750k | Grant | Silicon Carbide Optically Gate Solid State Power Switch | Department of Energy |
| 2007-05-31 | $100k | Grant | SiC Arrayed Detectors for Fast Neutron Detection | Department of Defense |
| 2007-01-01 | $100k | Grant | Large Area SiC GTO Thyristor Development Widebandgap High Voltage High | Department of Energy |
| 2007-01-01 | $650k | Grant | SiC Semiconductor Switches for Klystron Modulators | Department of Energy |
| 2007-01-01 | $100k | Grant | Silicon Carbide Optically Gate Solid State Power Switch | Department of Energy |
| 2006-07-28 | $100k | Grant | SiC Switch for Laser Power Modules | Department of Defense |
| 2006-01-01 | $100k | Grant | SiC Semiconductor Switches for Klystron Modulators | Department of Energy |
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